SiC MOSFET
产品型号 | 击穿电压 Vbrdss(V) | 导通电阻 Rdson(mΩ) | 电流 Id(A) | 阈值电压 Vgsth(V) | 最高工作结温 Tjmax(℃) | 封装形式 | 资料下载 |
---|---|---|---|---|---|---|---|
GC2M023170K | 1700 | 20 | 119 | 2.6 | 175 | TO-247-4L | |
GC2M080120K | 1200 | 80 | 36 | 2.4 | 175 | TO-247-4L | |
GC2M080120D | 1200 | 80 | 36 | 2.4 | 175 | TO-247-3L | |
GC2M060065K | 650 | 60 | 41 | 2.6 | 175 | TO-247-4L | |
GC2M060065D | 650 | 60 | 41 | 2.6 | 175 | TO-247-3L | |
GC2M050330K | 3300 | 50 | 68 | 2.6 | 175 | TO-247-4L | |
GC2M045170K | 1700 | 45 | 55 | 2.6 | 175 | TO-247-4L | |
GC2M040120K | 1200 | 40 | 60 | 3.2 | 175 | TO-247-4L | |
GC2M040120S | 1200 | 40 | 60 | 3.2 | 175 | SOT-227 | |
GC2M040120D | 1200 | 40 | 60 | 3.2 | 175 | TO-247-3L | |
GC2M030120S | 1200 | 32 | 75 | 3.0 | 175 | SOT-227 | |
GC2M030120K | 1200 | 30 | 75 | 2.6 | 175 | TO-247-4L | |
GC2M030065K | 650 | 30 | 55 | 2.6 | 175 | TO-247-4L | |
GC2M030065D | 650 | 30 | 55 | 2.6 | 175 | TO-247-3L | |
GC2M025120K | 1200 | 25 | 80 | 2.5 | 175 | TO-247-4L | |
GC2M023170S | 1700 | 23 | 140 | 2.6 | 175 | SOT-227 | |
GC2M020065D | 650 | 20 | 92 | 2.6 | 175 | TO-247-3L | |
GC2M016120S | 1200 | 16 | 106 | 2.5 | 175 | SOT-227 | |
GC2M016120D | 1200 | 16 | 115 | 2.6 | 175 | TO-247-3L | |
GC2M016120K | 1200 | 16 | 115 | 2.6 | 175 | TO-247-4L | |
GC2M013120K | 1200 | 13 | 140 | 3.0 | 175 | TO-247-4L | |
GC2M450K260G | 2600 | 450000 | 0.2 | 2.5-4.5 | 175 | TO-263-2 |
筛选: 重置
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